Morphology and nanostructure of CeO2(111) surfaces of single crystals and Si(111) supported ceria films

Autor(en): Pieper, H. H.
Derks, C.
Zoellner, M. H.
Olbrich, R.
Troeger, L.
Schroeder, T.
Neumann, M.
Reichling, M. 
Stichwörter: CATALYSTS; Chemistry; Chemistry, Physical; DEFECT STRUCTURE; FORCE MICROSCOPY; GROWTH; IONIC-CONDUCTIVITY; OXIDE LAYERS; PHASE-TRANSITION; Physics; Physics, Atomic, Molecular & Chemical; REDOX PROPERTIES; SCANNING-TUNNELING-MICROSCOPY; WATER-GAS SHIFT
Erscheinungsdatum: 2012
Herausgeber: ROYAL SOC CHEMISTRY
Journal: PHYSICAL CHEMISTRY CHEMICAL PHYSICS
Volumen: 14
Ausgabe: 44
Startseite: 15361
Seitenende: 15368
Zusammenfassung: 
The surface morphology of CeO2(111) single crystals and silicon supported ceria films is investigated by non-contact atomic force microscopy (NC-AFM) and Kelvin probe force microscopy (KPFM) for various annealing conditions. Annealing bulk samples at 1100 K results in small terraces with rounded ledges and steps with predominantly one O-Ce-O triple layer height while annealing at 1200 K produces well-ordered straight step edges in a hexagonal motif and step bunching. The morphology and topographic details of films are similar, however, films are destroyed upon heating them above 1100 K. KPFM images exhibit uniform terraces on a single crystal surface when the crystal is slowly cooled down, whereas rapid cooling results in a significant inhomogeneity of the surface potential. For films exhibiting large terraces, significant inhomogeneity in the KPFM signal is found even for best possible preparation conditions. Applying X-ray photoelectron spectroscopy (XPS), we find a significant contamination of the bulk ceria sample with fluorine while a possible fluorine contamination of the ceria film is below the XPS detection threshold. Time-of-flight secondary ion mass spectroscopy (TOF-SIMS) reveals an accumulation of fluorine within the first 5 nm below the surface of the bulk sample and a small concentration throughout the crystal.
ISSN: 14639076
DOI: 10.1039/c2cp42733h

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