Ultrathin, epitaxial cerium dioxide on silicon
Autor(en): | Flege, Jan Ingo Kaemena, Bjoern Hoecker, Jan Bertram, Florian Wollschlaeger, Joachim Schmidt, Thomas Falta, Jens |
Stichwörter: | CEO2; DESORPTION; GATE DIELECTRICS; GROWTH; INTERFACE; OXIDE; PHOTOELECTRON-SPECTROSCOPY; Physics; Physics, Applied; SI OXIDATION; SI(111); SURFACES | Erscheinungsdatum: | 2014 | Herausgeber: | AMER INST PHYSICS | Journal: | APPLIED PHYSICS LETTERS | Volumen: | 104 | Ausgabe: | 13 | Zusammenfassung: | It is shown that ultrathin, highly ordered, continuous films of cerium dioxide may be prepared on silicon following substrate prepassivation using an atomic layer of chlorine. The as-deposited, few-nanometer-thin Ce2O3 film may very effectively be converted at room temperature to almost fully oxidized CeO2 by simple exposure to air, as demonstrated by hard X-ray photoemission spectroscopy and X-ray diffraction. This post-oxidation process essentially results in a negligible loss in film crystallinity and interface abruptness. (C) 2014 AIP Publishing LLC. |
ISSN: | 00036951 | DOI: | 10.1063/1.4870585 |
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geprüft am 09.05.2024