Ultrathin, epitaxial cerium dioxide on silicon

Autor(en): Flege, Jan Ingo
Kaemena, Bjoern
Hoecker, Jan
Bertram, Florian 
Wollschlaeger, Joachim 
Schmidt, Thomas
Falta, Jens
Stichwörter: CEO2; DESORPTION; GATE DIELECTRICS; GROWTH; INTERFACE; OXIDE; PHOTOELECTRON-SPECTROSCOPY; Physics; Physics, Applied; SI OXIDATION; SI(111); SURFACES
Erscheinungsdatum: 2014
Herausgeber: AMER INST PHYSICS
Journal: APPLIED PHYSICS LETTERS
Volumen: 104
Ausgabe: 13
Zusammenfassung: 
It is shown that ultrathin, highly ordered, continuous films of cerium dioxide may be prepared on silicon following substrate prepassivation using an atomic layer of chlorine. The as-deposited, few-nanometer-thin Ce2O3 film may very effectively be converted at room temperature to almost fully oxidized CeO2 by simple exposure to air, as demonstrated by hard X-ray photoemission spectroscopy and X-ray diffraction. This post-oxidation process essentially results in a negligible loss in film crystallinity and interface abruptness. (C) 2014 AIP Publishing LLC.
ISSN: 00036951
DOI: 10.1063/1.4870585

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