Co 3d-level position in ZnS : Co semiconductors

Autor(en): Galakhov, VR
Surkova, TP
Yablonskikh, MV
Sokolov, AV
Kurmaev, EZ
Gridneva, L
Bartkowski, S
Neumann, M
Nordgren, J
Lopez-Rivera, SA
Stichwörter: ELECTRONIC-STRUCTURE; ENERGY-LEVELS; Materials Science; Materials Science, Multidisciplinary; Physics; Physics, Applied; Physics, Condensed Matter; SPECTROSCOPY; TRANSITION-METAL IMPURITIES; VALENCE BAND
Erscheinungsdatum: 2003
Herausgeber: AMERICAN PHYSICAL SOC
Journal: PHYSICAL REVIEW B
Volumen: 68
Ausgabe: 3
Zusammenfassung: 
Experimental studies of x-ray photoelectron and Co Lalpha x-ray emission spectra of the ZnS:Co semiconductor were carried out. It was established that Co ions are present in isovalent Co2+ configuration and that the Co 3d impurity states are localized above the top of the valence band by 1.0 /- 0.2 eV.
ISSN: 10980121
DOI: 10.1103/PhysRevB.68.033204

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