Co 3d-level position in ZnS : Co semiconductors
| Autor(en): | Galakhov, VR Surkova, TP Yablonskikh, MV Sokolov, AV Kurmaev, EZ Gridneva, L Bartkowski, S Neumann, M Nordgren, J Lopez-Rivera, SA |
Stichwörter: | ELECTRONIC-STRUCTURE; ENERGY-LEVELS; Materials Science; Materials Science, Multidisciplinary; Physics; Physics, Applied; Physics, Condensed Matter; SPECTROSCOPY; TRANSITION-METAL IMPURITIES; VALENCE BAND | Erscheinungsdatum: | 2003 | Herausgeber: | AMERICAN PHYSICAL SOC | Enthalten in: | PHYSICAL REVIEW B | Band: | 68 | Ausgabe: | 3 | Zusammenfassung: | Experimental studies of x-ray photoelectron and Co Lalpha x-ray emission spectra of the ZnS:Co semiconductor were carried out. It was established that Co ions are present in isovalent Co2+ configuration and that the Co 3d impurity states are localized above the top of the valence band by 1.0 /- 0.2 eV. |
ISSN: | 10980121 | DOI: | 10.1103/PhysRevB.68.033204 |
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