Impact of Tunnel-Barrier Strength on Magnetoresistance in Carbon Nanotubes
Autor(en): | Morgan, Caitlin Misiorny, Maciej Metten, Dominik Heedt, Sebastian Schaepers, Thomas Schneider, Claus M. Meyer, Carola |
Stichwörter: | BEHAVIOR; DEPENDENT TRANSPORT; DEVICES; ELECTRONS; GRAPHENE; MODELS; Physics; Physics, Applied; ROOM-TEMPERATURE; SILICON; SINGLE; SPIN POLARIZATION | Erscheinungsdatum: | 2016 | Herausgeber: | AMER PHYSICAL SOC | Journal: | PHYSICAL REVIEW APPLIED | Volumen: | 5 | Ausgabe: | 5 | Zusammenfassung: | We investigate magnetoresistance in spin valves involving CoPd-contacted carbon nanotubes. Both the temperature and bias-voltage dependence clearly indicate tunneling magnetoresistance as the origin. We show that this effect is significantly affected by the tunnel-barrier strength, which appears to be one reason for the variation between devices previously detected in similar structures. Modeling the data by means of the scattering matrix approach, we find a nontrivial dependence of the magnetoresistance on the barrier strength. Furthermore, an analysis of the spin precession observed in a nonlocal Hanle measurement yields a spin lifetime of tau(s) = 1.1 ns, a value comparable with those found in silicon- or graphene-based spin-valve devices. |
ISSN: | 23317019 | DOI: | 10.1103/PhysRevApplied.5.054010 |
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geprüft am 19.05.2024