Structure and stability of cub-Pr2O3 films on Si(111) under post deposition annealing conditions

Autor(en): Gevers, S.
Weisemoeller, T.
Zimmermann, B.
Deiter, C.
Wollschläger, J. 
Stichwörter: Annealing temperatures; Atomic step; Film surfaces; Heteroepitaxial; Interface structures; Lateral strain; Mosaic spread; Oxide phasis; Oxygen stoichiometry; Post deposition annealing; Si (1 1 1); Spot profile analysis; Structure and morphology; Ultra-thin; X-ray reflectometry, Annealing; Electron diffraction; Nanoscience; Oxide films; Oxygen; Soil conservation; Stoichiometry; X ray diffraction, Film preparation
Erscheinungsdatum: 2010
Journal: Physica Status Solidi (C) Current Topics in Solid State Physics
Volumen: 7
Ausgabe: 2
Startseite: 292
Seitenende: 295
Ultra thin heteroepitaxial Pr2O3 films on Si(111) were characterized by X-ray diffraction and X-ray reflectometry to determine the film and interface structure. These results exhibit two oxide phases within the praseodymia film after preparation which can be assigned to different oxygen stoichiometries. After post deposition annealing of the films at different temperatures up to 600 °C the surface was studied by spot profile analysis low energy electron diffraction, with regard to the stability of the film surface. The results show that terraces with mono-atomic step heights and mosaics can be found at the film surfaces after annealing at 300 °C. Higher annealing temperatures do not cause further changes of structure and morphology except of a slight increase of the mosaic spread due to lateral strain effects within the oxide film. These results indicate that the films are stable at temperatures as high as 600 °C. © 2010 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.
Conference of 12th International Conference on the Formation of Semiconductor Interfaces: From Semiconductor to Nanoscience and Applications with Biology, ICFSI-12 ; Conference Date: 5 July 2009 Through 10 July 2009; Conference Code:80926
ISSN: 18626351
DOI: 10.1002/pssc.200982406
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