Epitaxial growth of Bi(111) on Si(001)

Autor(en): Jnawali, G.
Hattab, H.
Bobisch, C.A.
Bernhart, A.
Zubkov, E.
Deiter, C.
Weisemoeller, T.
Bertram, F. 
Wollschl̈ager, J. 
M̈oller, R.
Hoegen, M.H.-V.
Stichwörter: Bismuth; Continuous layers; Crystalline quality; Dislocation; Dislocations (crystals); Disordered crystallites; Electron diffraction; Electrons; Heteroepi-taxy; Interfaces (materials); Interfacial misfit dislocations; Low energy electron diffraction; Low-energy electron diffraction (LEED); Periodic surfaces; Scanning tunneling microscopy; Scanning tunneling microscopy (STM); Si (001) substrate; Substrates; Temperature; X ray diffraction, Atomically smooth surface; X ray reflectivity, Lattice mismatch; X-ray diffraction; X-ray reflectivity
Erscheinungsdatum: 2009
Herausgeber: The Japan Society of Vacuum and Surface Science
Journal: e-Journal of Surface Science and Nanotechnology
Volumen: 7
Startseite: 441
Seitenende: 447
Zusammenfassung: 
Despite the large lattice misfit and different lattice symmetry, it is possible to grow smooth and almost defect-free bismuth (Bi) films on a Si(001) substrate. High resolution low-energy electron diffraction measurements have confirmed that the (111) orientation is the preferred direction of the growth. However, at low temperature and low coverage regime, rotationally disordered crystallites of (110) orientation are also observed. After the formation of a continuous layer at 5.6 bilayer (2.2 nm), the growth occurs in a bilayer-by-bilayer fashion at 150K. The remaining lattice mismatch of 2.3 % is accommodated by a periodic array of interfacial misfit dislocations, which gives rise to a periodic surface height undulation with sub-ångström amplitude. Additional growth to the desired thickness caps the height undulation resulting in an atomically smooth surface (terrace size >100 nm). The Bi(111) film is relaxed to bulk lattice constant and shows excellent crystalline quality with an abrupt interface to the Si substrate. © 2009 The Surface Science Society of Japan.
ISSN: 13480391
DOI: 10.1380/ejssnt.2009.441
Externe URL: https://www.scopus.com/inward/record.uri?eid=2-s2.0-68849087982&doi=10.1380%2fejssnt.2009.441&partnerID=40&md5=e28e2c3199e6041bd706ea2b3c62760d

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