Atomic resolution non-contact atomic force microscopy of clean metal oxide surfaces

Autor(en): Lauritsen, J. V.
Reichling, M. 
Stichwörter: ALPHA-AL2O3 0001 SURFACE; ALUMINA SURFACES; CEO2(111) SURFACES; DYNAMIC-BEHAVIOR; ELECTRONIC-STRUCTURE; OXYGEN VACANCIES; Physics; Physics, Condensed Matter; SCANNING-TUNNELING-MICROSCOPY; THIN-FILMS; TIO2(110) SURFACES; WATER-GAS SHIFT
Erscheinungsdatum: 2010
Herausgeber: IOP PUBLISHING LTD
Journal: JOURNAL OF PHYSICS-CONDENSED MATTER
Volumen: 22
Ausgabe: 26
Zusammenfassung: 
In the last two decades the atomic force microscope (AFM) has become the premier tool for topographical analysis of surface structures at the nanometre scale. In its ultimately sensitive implementation, namely dynamic scanning force microscopy (SFM) operated in the so-called non-contact mode (NC-AFM), this technique yields genuine atomic resolution and offers a unique tool for real space atomic-scale studies of surfaces, nanoparticles as well as thin films, single atoms and molecules on surfaces irrespective of the substrate being electrically conducting or non-conducting. Recent advances in NC-AFM have paved the way for groundbreaking atomic level insight into insulator surfaces, specifically in the most important field of metal oxides. NC-AFM imaging now strongly contributes to our understanding of the surface structure, chemical composition, defects, polarity and reactivity of metal oxide surfaces and related physical and chemical surface processes. Here we review the latest advancements in the field of NC-AFM applied to the fundamental atomic resolution studies of clean single crystal metal oxide surfaces with special focus on the representative materials Al2O3(0001), TiO2(110), ZnO(1000) and CeO2(111).
ISSN: 09538984
DOI: 10.1088/0953-8984/22/26/263001

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