Direct real-space imaging of the c(2x8)/(2x4) GaAs (001) surface structure

Autor(en): Kolodziej, J. J.
Goryl, M.
Konior, J.
Reichling, M. 
Szymonski, M.
Stichwörter: ATOMIC-STRUCTURE; DISORDER; ENERGY; FORCE MICROSCOPY; GAAS; GAAS(100); GEOMETRY; Materials Science; Materials Science, Multidisciplinary; Physics; Physics, Applied; Physics, Condensed Matter; RECONSTRUCTIONS; SCANNING-TUNNELING-MICROSCOPY; SPECTROSCOPY
Erscheinungsdatum: 2007
Herausgeber: AMER PHYSICAL SOC
Journal: PHYSICAL REVIEW B
Volumen: 76
Ausgabe: 24
Zusammenfassung: 
We have performed frequency-modulated atomic-force microscopy (FM-AFM) on the c(2x8)/(2x4) GaAs (001) surface obtained from the c(8x2)/(4x6) surface by exposing it to As-2 gas and annealing. Highly resolved interaction patterns reflect prevailing surface dimer pairs consistent with a so-called beta 2 structure, but more rare motifs characteristic of alpha 2 and beta structures are also seen. Atoms of the dimers interact with the atomic force microscope tip repulsively and appear as sharp features on a smooth background when imaged in constant-height mode. An analysis of the interaction decay length and lateral size of the atomic features indicates that the surface atoms are visualized through a core-core repulsion mechanism. In this imaging mode, the FM-AFM can be regarded as a true surface structure tool, since the observed features are, in the absence of significant lateral relaxation, associated with surface atoms directly.
ISSN: 24699950
DOI: 10.1103/PhysRevB.76.245314

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