Stacking behavior of twin-free type-B oriented CeO2(111) films on hexagonal Pr2O3(0001)/Si(111) systems
Autor(en): | Zoellner, M. H. Dabrowski, J. Zaumseil, P. Giussani, A. Schubert, M. A. Lupina, G. Wilkens, H. Wollschlaeger, J. Reichling, M. Baeumer, M. Schroeder, T. |
Stichwörter: | CE; DIOXIDE; EPITAXIAL-GROWTH; ETHYLENE; HETEROSTRUCTURES; Materials Science; Materials Science, Multidisciplinary; OXIDES; OXYGEN STORAGE CAPACITY; Physics; Physics, Applied; Physics, Condensed Matter; PRASEODYMIUM SESQUIOXIDE FILMS; REDOX PROPERTIES; SI(111) | Erscheinungsdatum: | 2012 | Herausgeber: | AMER PHYSICAL SOC | Journal: | PHYSICAL REVIEW B | Volumen: | 85 | Ausgabe: | 3 | Zusammenfassung: | Tailored CeO2/Pr2O3 thin-film oxide heterostructures are of interest for model catalysis studies by surface science techniques. For this purpose, thin CeO2(111) films were grown by molecular beam epitaxy on hex-Pr2O3(0001)/Si(111) as well as on cub-Pr2O3(111)/Si(111) support systems. A comparative, rigorous structure investigation by reflection high-energy electron diffraction transmission electron microscopy and laboratory and synchrotron based x-ray diffraction is reported. It is found that twin-free, exclusively type-B oriented CeO2(111) films are obtained on both oxide supports. CeO2(111) films adopt the stacking sequence from the cub-Pr2O3(111) buffer, but the transfer of the stacking information is less evident in the case of hex-Pr2O3(0001) films. Ab initio calculations are applied to understand the unusual stacking behavior of the CeO2(111) on the hex-Pr2O3(0001)/Si(111) system. It is revealed that the type-B stacking configuration is the more favorable configuration by 8 eV/nm(2) due to electronic and crystallographic factors. |
ISSN: | 24699950 | DOI: | 10.1103/PhysRevB.85.035302 |
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geprüft am 19.05.2024